Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte-Reference-Cited by-同舟云学术

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Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte

Published:2023-11 Issue:22 Volume:49 Page:34569-34581
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Yang Xiaozhe,Yang Xu^ORCID,Jiang Zhuangde,Yamamura Kazuya

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Silicon carbide as a platform for power electronics;Eddy;Science,2009

2. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

3. Optical polishing and characterization of chemical vapour deposited silicon carbide mirrors for space applications;Jalluri;J. Opt.,2022

4. Mechanical properties of SiC/SiC composites fabricated by PIP process with a new precursor polymer;Luo;Ceram. Int.,2014

5. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2;Wang;J. Mater. Process. Technol.,2021

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics;Tribology International;2024-12

2. Scratching properties of 4H–SiC single crystal after oxidation under different conditions;Wear;2024-11

3. Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte;Applied Surface Science;2024-08

4. Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron;Tribology International;2024-05

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