Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte-Reference-Cited by-同舟云学术

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Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte

Published:2023-11 Issue:22 Volume:49 Page:34569-34581
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Yang Xiaozhe,Yang Xu^ORCID,Jiang Zhuangde,Yamamura Kazuya

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Silicon carbide as a platform for power electronics;Eddy;Science,2009

2. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

3. Optical polishing and characterization of chemical vapour deposited silicon carbide mirrors for space applications;Jalluri;J. Opt.,2022

4. Mechanical properties of SiC/SiC composites fabricated by PIP process with a new precursor polymer;Luo;Ceram. Int.,2014

5. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2;Wang;J. Mater. Process. Technol.,2021

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