Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3040159
Reference31 articles.
1. Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons
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4. A physically based model of electromigration and stress-induced void formation in microelectronic interconnects
5. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
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