Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system
Author:
Affiliation:
1. Applied Quantum Mechanics Laboratory, Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5098864
Reference21 articles.
1. Empirical low-field mobility model for III–V compounds applicable in device simulation codes
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4. Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation
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4. Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors;Journal of Applied Physics;2023-10-24
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