Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124214
Reference13 articles.
1. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
2. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
3. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
4. AlGaN/GaN HEMTs grown on SiC substrates
5. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
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