Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2184431
Reference34 articles.
1. Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures
2. High-gain excitonic lasing from a single InAs monolayer in bulk GaAs
3. Lasers with δ InAs layers in GaAs
4. Observation of the 2D–3D growth mode transition in the system
5. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
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