Temperature dependence of red luminescence in pure β-Ga2O3: An estimation of electron-phonon interaction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference37 articles.
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3. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3
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5. Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3
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1. Effect of Al substitution on the electron-phonon interaction for β-Ga2O3;Physica Scripta;2024-08-09
2. Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure;Optical Materials;2024-04
3. Assessment of bonding characteristic of β-(AlxGa1−x)2O3 alloys from photoluminescence and x-ray absorption near edge spectroscopy;Applied Physics Letters;2023-04-10
4. Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3;Journal of Vacuum Science & Technology A;2023-01-27
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