Lasers with δ InAs layers in GaAs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Lasers with δ InAs layers in GaAs

Published:2002-01 Issue:2-3 Volume:88 Page:312-316
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Oswald J,Hulicius E,Pangrác J,Melichar K,Šimeček T,Petřı́ček O,Kuldová K,Hazdra P,Voves J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Optical investigations on isovalent δ layers in III‐V semiconductor compounds

2. Theory of carriers bound to In isoelectronic δ-doping layers in GaAs

3. Tight-binding approach to excitons bound to monolayer impurity planes: Strong radiative properties of InAs in GaAs

4. Crossover from strong to weak confinement for excitons in shallow or narrow quantum wells

5. Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy;Applied Surface Science;2006-10

2. Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well;Journal of Applied Physics;2006-03-15

3. Optical characterization of MOVPE grown δ‐InAs layers in GaAs;physica status solidi (c);2005-03

4. InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy;Journal of Crystal Growth;2003-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3