Theory of carriers bound to In isoelectronic δ-doping layers in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13148/fulltext
Reference27 articles.
1. Exciton localization in submonolayer InAs/GaAs multiple quantum wells
2. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
3. Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures
4. Two-photon spectroscopy of MgO:Ni2+
5. Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic states in heterostructures formed by ultranarrow layers;Journal of Physics: Condensed Matter;2012-10-09
2. Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells;Journal of Applied Physics;2011-04
3. Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm;Journal of Applied Physics;2010-01-15
4. A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells;Journal of Applied Physics;2009-11-15
5. Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk;physica status solidi (a);2006-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3