Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.4217/fulltext
Reference17 articles.
1. Theoretical approach to δ doping of GaAs with In
2. Absorption and photoluminescence of ultrathin pseudomorphic InAs/GaAs quantum wells
3. Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy
4. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
5. Exciton localization in submonolayer InAs/GaAs multiple quantum wells
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