Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97190
Reference13 articles.
1. The Metallurgy of Oxygen in Silicon
2. An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon
3. Mechanism of the Formation of Donor States in Heat-Treated Silicon
4. Diffusivity of oxygen in silicon at the donor formation temperature
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3. Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2018-02
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