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An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon

  • Published:1984-12-10 Issue:34 Volume:17 Page:6253-6276
  • ISSN:0022-3719
  • Container-title:Journal of Physics C: Solid State Physics
  • language:
  • Short-container-title:J. Phys. C: Solid State Phys.

Author:

Livingston F M,Messoloras S,Newman R C,Pike B C,Stewart R J,Binns M J,Brown W P,Wilkes J G

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

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2. Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

3. Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon;Materials Science in Semiconductor Processing;2021-03

4. Ultrahigh sensitivity SIMS analysis of oxygen in silicon;Surface and Interface Analysis;2018-05-17

5. IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon;Journal of Materials Science: Materials in Electronics;2017-04-07
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