Development of atomic radical monitoring probe and its application to spatial distribution measurements of H and O atomic radical densities in radical-based plasma processing-Reference-Cited by-同舟云学术

Development of atomic radical monitoring probe and its application to spatial distribution measurements of H and O atomic radical densities in radical-based plasma processing

Published:2009-09 Issue:5 Volume:106 Page:053306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Takahashi Shunji,Takashima Seigo,Yamakawa Koji,Den Shoji,Kano Hiroyuki,Takeda Keigo,Hori Masaru

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3212990

Reference25 articles.

1. Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

2. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

3. Evaluation of Property Changes due to Radiation, Radicals, and Ions on Organic Low-kFilms in H2/N2Plasma Etching

4. Progress of radical measurements in plasmas for semiconductor processing

5. Insights into sticking of radicals on surfaces for smart plasma nano-processing

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