Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4990868
Reference38 articles.
1. GaN on Si Technologies for Power Switching Devices
2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
3. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
4. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
5. Polarization dependent analysis of AlGaN/GaN HEMT for high power applications
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