Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications-Reference-Cited by-同舟云学术

Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

Published:2011-11-15 Issue:10 Volume:110 Page:104514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Xu Zhongguang¹,Huo Zongliang¹,Zhu Chenxin¹,Cui Yanxiang²,Wang Ming¹,Zheng Zhiwei¹,Liu Jing¹,Wang Yumei²,Li Fanghua²,Liu Ming¹

Affiliation:

1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference19 articles.

1. See http://www.itrs.net/Links/2010ITRS/2010Update/ToPost/2010Tables_PIDS_FOCUS_C_ITRS.xls for information about the International Technology Roadmap for Semiconductors sponsored by the five leading chip manufacturing regions in the world: Europe, Japan, Korea, Taiwan, and the United States

2. Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

3. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

4. Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

5. Memory characteristics of Pt nanocrystals self-assembledfrom reduction of an embedded PtOx ultrathin film in metal-oxide-semiconductor structures

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