Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN-Reference-Cited by-同舟云学术

Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN

Published:2020-11-02 Issue:18 Volume:117 Page:183502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xiao Ming¹^ORCID,Yan Xiaodong²^ORCID,Xie Jinqiao³,Beam Edward³,Cao Yu³^ORCID,Wang Han²,Zhang Yuhao¹^ORCID

Affiliation:

1. Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA

2. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90086, USA

3. Qorvo, Inc., Richardson, Texas 75081, USA

Funder

CPES Power Management Consortium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021374

Reference42 articles.

1. The 2018 GaN power electronics roadmap

2. Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

3. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

4. Recent development of vertical GaN power devices

5. Gallium nitride vertical power devices on foreign substrates: a review and outlook

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

2. Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Study of drain-induced channel effects in vertical GaN junction field-effect transistors;Semiconductor Science and Technology;2024-05-23

4. Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension;IEEE Journal of the Electron Devices Society;2024

5. Step Graded Floating Island Embedded Drift Design Engineering for High-Performance Vertical Power Devices;IEEE Transactions on Electron Devices;2023-12