Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ 0 a-face characterized by Hall effect measurements
Author:
Affiliation:
1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Funder
New Energy and Industrial Technology Development Organization
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5114669
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1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Material science and device physics in SiC technology for high-voltage power devices
3. Electrical transport inn-type 4H silicon carbide
4. Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
5. High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
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2. Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs;Semiconductor Science and Technology;2022-06-23
3. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs;Journal of Applied Physics;2022-04-14
4. Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces;Japanese Journal of Applied Physics;2022-03-02
5. Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2022-02-01
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