Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Author:

Valletta AntonioORCID,Roccaforte FabrizioORCID,La Magna AntoninoORCID,Fortunato Guglielmo,Fiorenza PatrickORCID

Abstract

Abstract The electrical performance of silicon carbide metal-oxide-semiconductor field effect transistors (4H-SiC MOSFETs) are strongly related to the presence of interface states at the silicon dioxide (SiO2)/4H-SiC interface, whose density is much higher than in the Si/SiO2 system. In particular, the charged interface states determine a degradation of the carrier mobility in the channel of the MOSFET with respect to the bulk mobility. A reliable and consistent method for the evaluation of the interface state density (D it) and the effective channel mobility (μ ch) in these devices is presented in this work. The two quantities are simultaneously extracted by a combined fit of the current–voltage (IV) and capacitance–voltage (CV) electrical characteristics collected on a single device. The simultaneous fit of the IV and CV characteristics, which can be easily measured on the same device, noticeably improve the reliability of D it and μ ch estimation. The results obtained at different temperatures indicate an increase of the μ ch with T, in agreement with a dominance of the Coulomb scattering effect as the degradation mechanism of the carrier channel mobility induced by the presence of charged interface states.

Funder

ECSEL-JU

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3