Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP-Reference-Cited by-同舟云学术

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Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

Published:2016-03-21 Issue:11 Volume:119 Page:115302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Hong-Ming¹,Tsai Shi-Jane²^ORCID,Ho Hao-I¹,Lin Hao-Hsiung¹³^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

2. Visual Photonics Epitaxy Co., Ltd., Ping-Jen City 324, Taiwan

3. Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944322

Reference20 articles.

1. P-Type Doping Effects on Band-Gap Energy for Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy

2. The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P

3. Surfactant effects of dopants on ordering in GaInP

4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells;Solar Energy Materials and Solar Cells;2020-04

2. Raman spectroscopy investigation of inter-diffusion in GaP/Ge(111) heterostructures;Superlattices and Microstructures;2019-01

3. Effect of Ge autodoping during III-V MOVPE growth on Ge substrates;Journal of Crystal Growth;2017-10

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