Raman spectroscopy investigation of inter-diffusion in GaP/Ge(111) heterostructures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference43 articles.
1. III–Vs on Si for photonic applications – a monolithic approach;Wang;Mater. Sci. Eng. B,2012
2. Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer;Desplanque;Appl. Phys. Lett.,2012
3. Large photonic strength of highly tunable resonant nanowire materials;Muskens;Nano Lett.,2009
4. GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration;Volz;J. Cryst. Growth,2011
5. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate;Liebich;Appl. Phys. Lett.,2011
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001);Surfaces and Interfaces;2024-01
2. Effect of germanium auto-diffusion on the bond lengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy;Journal of Synchrotron Radiation;2021-01-28
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