Deep level photothermal spectroscopy: Physical principles and applications to semi-insulating GaAs band-gap multiple trap states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2842401
Reference27 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach
3. Deep‐level spectroscopy in high‐resistivity materials
4. High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating GaAs
5. Phase‐shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states
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3. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: A tutorial;Journal of Applied Physics;2022-04-14
4. Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography;ACS Applied Electronic Materials;2021-06-04
5. Time-resolved laser scanning photothermal microscopy for characterization of thermal properties of semi-insulating GaAs;Optics Express;2020-04-01
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