Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography-Reference-Cited by-同舟云学术

Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography

Published:2021-06-04 Issue:6 Volume:3 Page:2551-2563
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Melnikov Alexander¹²^ORCID,Mandelis Andreas¹²,Soral Akshit¹,Zavala-Lugo Claudia¹³,Pawlak Michal⁴

Affiliation:

1. Center for Advanced Diffusion-Wave and Photoacoustic Technologies, University of Toronto, 5 King’s College Road, Toronto, Ontario M5S 3G8, Canada

2. Institute for Advanced Non-Destructive and Non-Invasive Diagnostic Technologies (IANDIT), 5 King’s College Road, Toronto, Ontario M5S 3G8, Canada

3. Technical University of Queretaro (UTEQ), Queretaro 76130, Mexico

4. Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun, Poland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00100

Reference38 articles.

1. CdZnTe detectors for gamma spectroscopy and x-ray photon counting at 250 × 106 photons/(mm2 s)

2. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

3. Recent progress in CdTe and CdZnTe detectors

4. Efficiency improvement of CdZnTe solar cell by modification of interface layer

5. Design of CdZnTe and Crystalline Silicon Tandem Junction Solar Cells

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