Ultrahigh‐vacuum four‐circle diffractometer for grazing incidence x‐ray diffraction on in situ MBE grown III‐V semiconductor surfaces
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1140722
Reference11 articles.
1. X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
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4. Observation of strain in the Si(111) 7×7 surface
5. Apparatus for X-ray diffraction in ultrahigh vacuum
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1. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16
2. Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system;Journal of Crystal Growth;2014-09
3. X-ray Diffraction Study of Crystal Growth Dynamics during Molecular-Beam Epitaxy of III–V Semiconductors;Journal of the Physical Society of Japan;2013-02-15
4. Nanostructures Observed by Surface Sensitive X-Ray Scattering and Highly Focused Beams;Characterization of Semiconductor Heterostructures and Nanostructures;2013
5. UHV-type synchrotron radiation reflectometer;Vacuum;2009-01
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