First-principles study on the effect of SiO2 layers during oxidation of 4H-SiC
Author:
Affiliation:
1. Center for Computational Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
2. JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
3. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913598
Reference25 articles.
1. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
2. First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces
3. Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure
4. Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiC
5. Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation
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