Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure-Reference-Cited by-同舟云学术

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Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure

Published:2006-04-10 Issue:15 Volume:88 Page:153516
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ming Zhao,Nakajima Kaoru,Suzuki Motofumi,Kimura Kenji,Uematsu Masashi,Torii Kazuyoshi,Kamiyama Satoshi,Nara Yasuo,Yamada Keisaku

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2195101

Reference19 articles.

1. Reaction–diffusion in high-k dielectrics on Si

2. High-κ gate dielectrics: Current status and materials properties considerations

3. General Relationship for the Thermal Oxidation of Silicon

4. On the oxidation of silicon

5. Diffusion of oxygen and silicon in silicon: Silicon monoxide model

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