Growth mechanism of highly uniform InAs/GaAs quantum dot with periodic arsine interruption by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624665
Reference24 articles.
1. Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
2. Alternative precursor metal-organic chemical vapor deposition of InGaAs∕GaAs quantum dot laser diodes with ultralow threshold at 1.25μm
3. Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition
4. Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array
5. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of strain on ultrahigh-performance optoelectronics and growth behavior of high-quality indium tin oxide films on yttria-stabilized zirconia (001) substrates;Journal of Materials Science: Materials in Electronics;2021-07-27
2. Removal of strain relaxation induced defects by flushing of InAs quantum dots;Journal of Physics D: Applied Physics;2012-08-28
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