Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes-Reference-Cited by-同舟云学术

Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes

Published:2012-06-11 Issue:24 Volume:100 Page:241112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Tufu,Wang Yunqian,Xiang Peng,Luo Ruihong,Liu Minggang,Yang Weimin,Ren Yuan,He Zhiyuan,Yang Yibin,Chen Weijie,Zhang Xiaorong,Wu Zhisheng,Liu Yang,Zhang Baijun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4729414

Reference13 articles.

1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

2. Growth of high quality GaN layers with AlN buffer on Si(111) substrates

3. Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile

4. Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

5. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

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