Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1808237
Reference22 articles.
1. GaN-based optoelectronics on silicon substrates
2. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
3. AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications
4. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
5. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
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3. Cross-sectional stress distribution in Al x Ga 1-x N heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction;Materials & Design;2016-09
4. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate;Journal of Alloys and Compounds;2016-06
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