Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth-Reference-Cited by-同舟云学术

Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth

Published:2006-01-15 Issue:2 Volume:99 Page:023507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mahan A. H.,Roy B.,Reedy R. C.,Readey D. W.,Ginley D. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2159550

Reference36 articles.

1. Rapid Thermal Processing: Science and Technology, edited by R. B. Fair (Elsevier, New York, 1993), p. 430.

2. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

3. Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films

4. Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass

5. A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Protocrystallinity of Monodispersed Ultra-Small Templated Mesoporous Silica Nanoparticles;Nanomaterials;2024-06-19

2. In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min;ACS Applied Materials & Interfaces;2019-07-30

3. Evidence for nitrogen-related deep acceptor states in SnO2 grown by chemical vapor deposition;Journal of Applied Physics;2017-11-28

4. Rapid and controllable a-Si:H-to-nc-Si:H transition induced by a high-density plasma route;Journal of Physics D: Applied Physics;2017-08-29

5. On the mechanisms of hydrogen-induced blistering in RF-sputtered amorphous Ge;CrystEngComm;2017