Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect-Reference-Cited by-同舟云学术

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Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect

Published:2017-07-14 Issue:2 Volume:122 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ayedh H. M.¹,Nipoti R.²^ORCID,Hallén A.³^ORCID,Svensson B. G.¹

Affiliation:

1. University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo, Norway

2. Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi, Sezione di Bologna (CNR-IMM of Bologna), I-40129 Bologna, Italy

3. Royal Institute of Technology KTH, School of Information and Communication Technology (ICT), SE-164 40 Kista-Stockholm, Sweden

Funder

Universitetet i Oslo (UiO)

Norges Forskningsråd (Forskningsrådet)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991815

Reference27 articles.

1. Lifetime-limiting defects in n− 4H-SiC epilayers

2. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

3. Carrier lifetime measurement in n− 4H-SiC epilayers

4. Negative-USystem of Carbon Vacancy in4H-SiC

5. Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

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1. Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method;Solid State Phenomena;2024-08-27

2. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

3. Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC;Journal of Applied Physics;2024-05-09

4. Al-implantation induced damage in 4H-SiC;Materials Science in Semiconductor Processing;2024-05

5. Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers;Materials Science in Semiconductor Processing;2024-05

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