Crystal size and oxygen segregation for polycrystalline GaN-Reference-Cited by-同舟云学术

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Crystal size and oxygen segregation for polycrystalline GaN

Published:2002-09-15 Issue:6 Volume:92 Page:3397-3403
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Butcher K. S. A.,Timmers H.,Afifuddin ,Chen Patrick P.-T.,Weijers T. D. M.,Goldys E. M.,Tansley T. L.,Elliman R. G.,Freitas J. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1499232

Reference27 articles.

1. Group III nitride semiconductors for short wavelength light-emitting devices

2. Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

3. Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

4. Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN

5. Ga-metal inclusions in GaN grown on sapphire

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3. Role of Temperature in Arsenic-Induced Antisurfactant Growth of GaN Microrods;ACS Omega;2022-07-05

4. Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS₂ Template;ACS Applied Materials & Interfaces;2022-04-04

5. Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes;Coatings;2021-12-07

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