Ga-metal inclusions in GaN grown on sapphire-Reference-Cited by-同舟云学术

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Ga-metal inclusions in GaN grown on sapphire

Published:1999-06 Issue:3 Volume:203 Page:349-354
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Blant A.V,Novikov S.V,Cheng T.S,Flannery L.B,Harrison I,Campion R.P,Korakakis D,Larkins E.C,Kribes Y,Foxon C.T

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. GaN, AlN, and InN: A review

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Electric breakdown in GaN p‐n junctions

4. Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

5. AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress

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2. DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects;Journal of Applied Physics;2017-01-07

3. Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates;Surface Science;2010-08

4. Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum;Applied Surface Science;2010-05

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