+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2757089
Reference19 articles.
1. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
2. Studies of metal–ferroelectric–GaN structures
3. Growth of ferroelectric oxide films on n-GaN/c-sapphire structures
4. Epitaxial growth of multiferroic YMnO3 on GaN
5. Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications
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