Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas-Reference-Cited by-同舟云学术

Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas

Published:2019-11-04 Issue:19 Volume:115 Page:193505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Lixiang¹²,Wang He¹,Hou Bin¹^ORCID,Liu Ming³,Shen Lvkang³,Lu Xiaoli¹^ORCID,Ma Xiaohua¹,Hao Yue¹

Affiliation:

1. School of Microelectronics and State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

3. School of Electronic Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China

Funder

National Natural Science Foundation of China

Science Challenge Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123192

Reference20 articles.

1. High Speed Epitaxial Perovskite Memory on Flexible Substrates

2. A Ferroelectric Oxide Made Directly on Silicon

3. Single crystal functional oxides on silicon

4. GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3Ferroelectric Insulator on Gate-Recessed Structure

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