Hf0.5Zr0.5O2-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings-Reference-Cited by-同舟云学术

Hf_0.5Zr_0.5O₂-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Published:2023-11 Issue:11 Volume:70 Page:6082-6085
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Kun¹^ORCID,Wan Jiaxian¹^ORCID,Chen Keyue²^ORCID,Tu Zexin¹^ORCID,Wu Hao³,Liu Chang¹^ORCID

Affiliation:

1. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China

2. National Key Discipline Laboratory of Wide Bandgap Semiconductor, School of Microelectronics, Xidian University, Xi’an, China

3. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid Physics, Wuhan University, Wuhan, China

Funder

National Key Research and Development Plan

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10250925.pdf?arnumber=10250925

Reference21 articles.

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

2. Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

3. High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

4. Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

5. Experimental observation and physics of ‘negative’ capacitance steeper than 40mV/decade subthreshold swing Al0.83In0.17N/AlN/GaN MOS-HEMT SiC substrate;then;IEDM Tech Dig,2013

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