Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO <sub>2</sub> Ferroelectric Film-Reference-Cited by-同舟云学术

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Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO ₂ Ferroelectric Film

Published:2022-06-23 Issue:11 Volume:8 Page:2200310
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Yong Bin¹,Kim Beom Yong²,Park Hyeon Woo¹,Lee Suk Hyun¹,Oh Minsik¹,Ryoo Seung Kyu¹,Lee In Soo¹,Byun Seungyong¹,Shim Doosup¹²,Lee Jae Hoon¹²,Kim Hani¹²,Kim Kyung Do¹,Park Min Hyuk¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center College of Engineering Seoul National University Seoul 08826 Republic of Korea

2. R&D Division SK Hynix Semiconductor, Inc. Icheon Gyeonggi 17336 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200310

Reference43 articles.

1. A new solid state memory resistor

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

3. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

4. Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applications

5. Ferroelectric switching, memory retention and endurance properties of very thin PZT films

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1. Gate-controlled near-surface Josephson junctions;Applied Physics Letters;2024-01-22

2. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry;The Journal of Physical Chemistry Letters;2024-01-22

3. Ferroelectricity in the Al doped HfO2;Journal of Alloys and Compounds;2023-11

4. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices;APL Materials;2023-08-01

5. Impact of Zr substitution on the electronic structure of ferroelectric hafnia;Journal of Applied Physics;2023-05-09

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