Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing

Author:

Xu Kangli1ORCID,Wang Tianyu234,Lu Chen1,Song Yifan1,Liu Yongkai1,Yu Jiajie1,Liu Yinchi1,Li Zhenhai1,Meng Jialin15ORCID,Zhu Hao15ORCID,Sun Qing-Qing15ORCID,Zhang David Wei156,Chen Lin15ORCID

Affiliation:

1. School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China

2. School of Integrated Circuits, Shandong University, Jinan 250100, China

3. Suzhou Research Institute of Shandong University, Suzhou 215123, China

4. State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

5. National Integrated Circuit Innovation Center, Shanghai 201203, China

6. Jiashan Fudan Institute, Jiaxing 314110, China

Funder

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Natural Science Foundation of Jiangsu Province

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Jiashan Fudan Institute

Open Research Fund of State Key Laboratory of Materials for Integrated Circuits

Qilu Young Scholar Program of Shandong University

Publisher

American Chemical Society (ACS)

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