Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices
Author:
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801497
Reference30 articles.
1. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
2. Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
3. Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics
4. Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
5. Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
Cited by 95 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs;IEEE Access;2024
2. A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C;Vacuum;2023-10
3. Reduced thermal resistance of amorphous Al2O3 thin films on β-Ga2O3 and amorphous SiO2 substrates via rapid thermal annealing;Applied Physics Letters;2023-09-25
4. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15
5. Fluorine and related complexes in α-Al2O3;Journal of Applied Physics;2023-08-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3