Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3557066
Reference14 articles.
1. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
2. Oxide TFT with multilayer gate insulator for backplane of AMOLED device
3. 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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