Low-Voltage MgZnO Thin Film Transistors with an Amorphous Al2 O3 Gate Insulator Grown by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

Low-Voltage MgZnO Thin Film Transistors with an Amorphous Al2 O3 Gate Insulator Grown by Pulsed Laser Deposition

Published:2018-03-05 Issue:11 Volume:215 Page:1700821
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wang ChangPeng¹,Tang Dan¹,Han Shun¹,Cao PeiJiang¹,Liu XinKe¹,Zeng YuXiang¹,Liu WenJun¹,Jia Fang¹,Xu WangYing¹,Zhu DeLiang¹,Lu YouMing¹

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University; Shenzhen Key Laboratory of Special Functional Materials; Shenzhen Engineering Laboratory for Advanced Technology of Ceramics; Guangdong Research Center for Interfacial Engineering of Functional Materials; Shenzhen 518060 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Science and Technology Project of Guangdong Province

Science and Technology Foundation of Shenzhen

Shenzhen Key Laboratory of Special Functional Materials

Shenzhen University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700821/fullpdf

Reference25 articles.

1. Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

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5. Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

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