Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3358132
Reference19 articles.
1. Step-Bunching Instability of Vicinal Surfaces under Stress
2. Si1−xGexgrowth instabilities on vicinal Si(001) substrates: Kinetic vs. strain-induced effects
3. On the microscopic origin of the kinetic step bunching instability on vicinal Si()
4. Ordering of Si0.55Ge0.45 islands on vicinal Si(001) substrates: Interplay between kinetic step bunching and strain-driven island growth
5. Self-organized nanostructures in Si 1-x Ge x films on Si(001)
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1. Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate;Nanoscale Research Letters;2017-01-24
2. Formation of lateral nanowires by Ge deposition on Si(111) at high temperatures;Journal of Crystal Growth;2016-05
3. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28
4. Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction;Nanoscale;2015
5. Semiconductor Quantum Dots: Model Case Ge/Si;Surface and Interface Science;2014-11-21
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