Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction-Reference-Cited by-同舟云学术

Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction

Published:2015 Issue:13 Volume:7 Page:5835-5842
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhou Tong¹²³⁴,Vastola Guglielmo⁵⁶,Zhang Yong-Wei⁵⁶,Ren Qijun¹²³⁴,Fan Yongliang¹²³⁴,Zhong Zhenyang¹²³⁴

Affiliation:

1. State Key Laboratory of Surface Physics and Department of Physics

2. Collaborative Innovation Center of Advanced Microstructures

3. Fudan University

4. Shanghai 200433, China

5. A*STAR Institute of High Performance Computing

6. , Singapore 138632

Abstract

Naturally aligned in-plane (without post-growth assembly), defect-free (without a metal catalyst) and controllable GeSi nanowires are discovered via self-assembly of Ge on miscut Si (001) substrates by an angle θ (θ < 11°) toward the [100] direction.

Funder

Agency for Science, Technology and Research

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR07433E

Reference51 articles.

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2. Quantum computing based on semiconductor nanowires