Formation of lateral nanowires by Ge deposition on Si(111) at high temperatures
Author:
Funder
RSF
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference38 articles.
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1. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22
2. Synthesis of Si nanoparticle chains and nanowhiskers by the monosilane decomposition in an adiabatic process during cyclic compression;Powder Technology;2021-12
3. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures;Applied Surface Science;2019-01
4. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures;Materials Science in Semiconductor Processing;2018-08
5. Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate;Nanoscale Research Letters;2017-01-24
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