A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903768
Reference45 articles.
1. Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications
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