InAs N-MOSFETs with record performance of I<inf>on</inf> = 600 μA/μm at I<inf>off</inf> = 100 nA/μm (V<inf>d</inf> = 0.5 V)-Reference-Cited by-同舟云学术

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Chang S. W.,Li Xu,Oxland R.,Wang S. W.,Wang C. H.,Contreras-Guerrero R.,Bhuwalka K. K.,Doornbos G.,Vasen T.,Holland M. C.,Vellianitis G.,van Dal M. J. H.,Duriez B.,Edirisooriya M.,Rojas-Ramirez J. S,Ramvall P.,Thoms S.,Peralagu U.,Hsieh C. H.,Chang Y. S.,Yin K. M.,Lind E.,Wernersson L.-E.,Droopad R.,Thayne I.,Passlack M.,Diaz C. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724639.pdf?arnumber=6724639

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