Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan
Funder
Japan Society for the Promotion of Science
Core Research for Evolutional Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007978
Reference36 articles.
1. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
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3. High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
4. Surface and interface barriers of In[sub x]Ga[sub 1−x]As binary and ternary alloys
5. Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
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