Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
Author:
Affiliation:
1. IBM Research – Zurich, 8803 Rüschlikon, Switzerland
2. IBM Research – T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
Funder
Seventh Framework Programme (European Union Seventh Framework Programme)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921962
Reference24 articles.
1. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
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3. III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects
4. The growth of GaAs and LnxGa1-xAs on patterned silicon substrates
5. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
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