Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
Funder
Japan Society for the Promotion of Science (JSPS) KAKENHI, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09696189.pdf?arnumber=9696189
Reference36 articles.
1. Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields
2. Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology
3. Impact of asymmetric strain on performance of extremely-thin body (100) GOI and (110) SGOI pMOSFETs;chen;Proc IEEE Symp VLSI Technol,2021
4. A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs
5. On the Electron Mobility in Ultrathin SOI and GOI
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4. Interpretation of mobility universality against effective electric field of Si nMOSFETs based on nonlinear model of surface roughness scattering;Applied Physics Express;2023-06-01
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