High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and V<inf>th</inf> tunability-Reference-Cited by-同舟云学术

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High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Kim Sang Hyeon,Yokoyama M.,Nakane R.,Ichikawa O.,Osada T.,Hata M.,Takenaka M.,Takagi S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724642.pdf?arnumber=6724642

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V-on-Si transistor technologies: Performance boosters and integration;Solid-State Electronics;2021-11

2. Comparative Quantum Analysis of Si/Ge Channel Tri-Gate Mosfets;Journal of Nano Research;2019-06

3. III-V Devices and Technology for CMOS;High Mobility Materials for CMOS Applications;2018

4. Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs;Solid-State Electronics;2016-08

5. III–V/Ge channel MOS device technologies in nano CMOS era;Japanese Journal of Applied Physics;2015-05-07

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