Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2185254
Reference9 articles.
1. Influence of nitrogen on the oxygen dissociation in a DC discharge
2. Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives
3. Neutral gas temperature measurements within transformer coupled toroidal argon plasmas
4. Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopy
5. Comparison of argon electron‐cyclotron‐resonance plasmas in three magnetic field configurations. II. Energy distribution of argon ions
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