Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives-Reference-Cited by-同舟云学术

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Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives

Published:1995-05-15 Issue:20 Volume:66 Page:2634-2636
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Beulens J. J.,Kastenmeier B. E. E.,Matsuo P. J.,Oehrlein G. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113108

Reference18 articles.

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma;Journal of Vacuum Science & Technology A;2023-01

3. SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam;Journal of Vacuum Science & Technology A;2022-12

4. Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etching;Nanotechnology and Precision Engineering;2020-12

5. Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma;Thin Solid Films;2019-09

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